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| LSF905C1 Infrared Emitting Diode RELATIVE POWER OUTPUT(%) High-output Power Compact High Reliability APPLICATIONS Optical Switches Optical Sensors Medical Application FEATURES Anode @ Cathode Dimensions (Unit:mm) A SPECTRAL OUTPUT 120 100 80 60 40 20 0 800 900 1000 WAVELENGTH(nm) 1. ABSOLUTE MAXIMUM RATINGS (Ta=25*Z) ITEM SYMBOL RATINGS Forward Current (DC) 60 IF Forward Current (Pulse)*1 0.5 IFP Reverse Voltage 5 VR Power Dissipation 100 PD Topr Operating Temp. -20 TO 85 Tstg Storage Temp. -30 TO 100 Junction Temp. 100 Tj Lead Soldering Temp.*2 260 Tls *1:Tw=10uS,T=10mS *2:Time 5 Sec max,Position:Up to 3mm from the body UNIT mA A V mW *Z *Z *Z *Z To purchase this part contact Marktech Optoelectronics at 800.984.5337 Marktech Optoelectronics www.marktechopto.com LSF905C1 Infrared Emitting Diode RELATIVE POWER vs FORWARD FORWARD I-V CHARACTERISTICS RADIATION PATTERN CURRENT 400 120 80 350 70 100 300 60 80 250 50 60 200 40 150 30 40 20 100 20 10 50 0 0 0 -90 -60 -30 0 30 60 90 0 1 2 3 0 20 40 60 80 BEAM ANGLE(deg.) FORWARD VOLTAGE(V) FORWARD CURRENT(mA) FORWARD VOLTAGE vs TEMPERATURE THERMAL DERATING CURVE POWER OUTPUT vs TEMPERATURE IF=10mA IF=10mA 1.6 80 140 70 120 1.5 60 100 1.4 50 80 1.3 40 60 30 1.2 40 20 1.1 20 10 1 0 0 -30 0 30 60 90 -30 0 30 60 90 -30 0 30 60 90 AMBIENT TEMPERATURE(*Z) AMBIENT TEMPERATURE(*Z) AMBIENT TEMPERATURE(*Z) FORWARD VOLTAGE(V) RELATIVE POWER OUTPUT(%) 1000 FORWARD CURRENT(mA) RELATIVE POWER OUTPUT(%) RELATIVE POWER OUTPUT(%) 2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25*Z ) ITEM CONDITIONS SYMBOL Power Output IF=20mA PO Forward Voltage IF=20mA VF Reverse Current VR=5V IR Peak Wavelength Ep IF=20mA Spectral Line Half Width E IF=20mA Half Intensity Beam Angle AE IF=20mA Rise Time IFP=50mA Tr Fall Time IFP=50mA Tf Junction Capacitance 1MHz ,V=0V Cj Temp. Coefficient of PO IF=10mA P/T Temp. Coefficient of VF IF=10mA V/T FORWARD CURRENT(mA) MIN TYP 6.0 1.3 910 60 25 *| *| 70 -0.5 -1.6 MAX UNIT mW 1.6 V 100 EA nm nm deg. nS nS pF %/*Z mV/*Z |
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